Nekuda kwekusawanikwa kwemoissanite yechisikigo, silicon carbide yakawanda inogadzirwa nemakemikari. Inoshandiswa sechinhu chinokwevera, uye munguva pfupi yapfuura se semiconductor ne diamond simulant yemhando yepamusoro. Maitiro ari nyore ekugadzira ndeyekubatanidza silica jecha nekabhoni muchoto chemagetsi cheAcheson graphite pakupisa kwakanyanya, pakati pe1,600 °C (2,910 °F) uye 2,500 °C (4,530 °F). Zvidimbu zveSiO2 zvakapfava zviri mumiti (semuenzaniso mahudyu emupunga) zvinogona kushandurwa kuita SiC nekudziisa kabhoni yakawandisa kubva muzvinhu zvakasikwa. Silica fume, inova chinhu chinobva mukugadzira silicon metal ne ferrosilicon alloys, inogonawo kushandurwa kuita SiC nekudziisa ne graphite pa1,500 °C (2,730 °F).
F12-F1200, P12-P2500
0-1mm, 1-3mm, 6/10, 10/18, 200mesh, 325mesh
Zvimwe zvinhu zvakakosha zvinogona kupihwa kana zvakumbirwa.
| Grit | Sic | FC | Fe2O3 |
| F12-F90 | ≥98.50 | <0.20 | ≤0.60 |
| F100-F150 | ≥98.00 | <0.30 | ≤0.80 |
| F180-F220 | ≥97.00 | <0.30 | ≤1.20 |
| F230-F400 | ≥96.00 | <0.40 | ≤1.20 |
| F500-F800 | ≥95.00 | <0.40 | ≤1.20 |
| F1000-F1200 | ≥93.00 | <0.50 | ≤1.20 |
| P12-P90 | ≥98.50 | <0.20 | ≤0.60 |
| P100-P150 | ≥98.00 | <0.30 | ≤0.80 |
| P180-P220 | ≥97.00 | <0.30 | ≤1.20 |
| P230-P500 | ≥96.00 | <0.40 | ≤1.20 |
| P600-P1500 | ≥95.00 | <0.40 | ≤1.20 |
| P2000-P2500 | ≥93.00 | <0.50 | ≤1.20 |
| Grits | Kuwanda kwehuwandu (g/cm3) | Kuwanda Kwevanhu (g/cm3) | Grits | Kuwanda kwehuwandu (g/cm3) | Kuwanda Kwevanhu (g/cm3) |
| F16 ~ F24 | 1.42~1.50 | ≥1.50 | F100 | 1.36~1.45 | ≥1.45 |
| F30 ~ F40 | 1.42~1.50 | ≥1.50 | F120 | 1.34~1.43 | ≥1.43 |
| F46 ~ F54 | 1.43~1.51 | ≥1.51 | F150 | 1.32~1.41 | ≥1.41 |
| F60 ~ F70 | 1.40~1.48 | ≥1.48 | F180 | 1.31~1.40 | ≥1.40 |
| F80 | 1.38~1.46 | ≥1.46 | F220 | 1.31~1.40 | ≥1.40 |
| F90 | 1.38~1.45 | ≥1.45 |
Kana muine mibvunzo. Ndapota inzwa wakasununguka kutibata nesu.