Nekuda kwekushomeka kwechisikigo moissanite, yakawanda silicon carbide inogadzirwa.Inoshandiswa seabrasive, uye munguva pfupi yapfuura semiconductor uye diamond simulant yemhando yegem.Iyo yakapfava yekugadzira maitiro ndeyekubatanidza silica jecha uye kabhoni muAcheson graphite yemagetsi kuramba muchoto pakupisa kwakanyanya, pakati pe1,600 °C (2,910 °F) uye 2,500 °C (4,530 °F).Fine SiO2 zvidimbu mune chirimwa (semupunga mateko) anogona kuchinjirwa kuSiC nekudziya mune yakawandisa kabhoni kubva kune organic zvinhu.Iyo silica fume, inove yakagadzirwa nesilicon simbi uye ferrosilicon alloys, zvakare inogona kushandurwa kuita SiC nekudziya negraphite pa1,500 °C (2,730 °F).
F12-F1200, P12-P2500
0-1mm, 1-3mm, 6/10, 10/18, 200mesh, 325mesh
Zvimwe zvakakosha zvinogona kupihwa pakukumbira.
Grit | Sic | FC | Fe2O3 |
F12-F90 | ≥98.50 | <0.20 | ≤0.60 |
F100-F150 | ≥98.00 | <0.30 | ≤0.80 |
F180-F220 | ≥97.00 | <0.30 | ≤1.20 |
F230-F400 | ≥96.00 | <0.40 | ≤1.20 |
F500-F800 | ≥95.00 | <0.40 | ≤1.20 |
F1000-F1200 | ≥93.00 | <0.50 | ≤1.20 |
P12-P90 | ≥98.50 | <0.20 | ≤0.60 |
P100-P150 | ≥98.00 | <0.30 | ≤0.80 |
P180-P220 | ≥97.00 | <0.30 | ≤1.20 |
P230-P500 | ≥96.00 | <0.40 | ≤1.20 |
P600-P1500 | ≥95.00 | <0.40 | ≤1.20 |
P2000-P2500 | ≥93.00 | <0.50 | ≤1.20 |
Grits | Bulk Density (g/cm3) | High Density (g/cm3) | Grits | Bulk Density (g/cm3) | High Density (g/cm3) |
F16 ~ F24 | 1.42~1.50 | ≥1.50 | F100 | 1.36~1.45 | ≥1.45 |
F30 ~ F40 | 1.42~1.50 | ≥1.50 | F120 | 1.34~1.43 | ≥1.43 |
F46 ~ F54 | 1.43~1.51 | ≥1.51 | F150 | 1.32~1.41 | ≥1.41 |
F60 ~ F70 | 1.40~1.48 | ≥1.48 | F180 | 1.31~1.40 | ≥1.40 |
F80 | 1.38~1.46 | ≥1.46 | F220 | 1.31~1.40 | ≥1.40 |
F90 | 1.38~1.45 | ≥1.45 |
Kana uine chero mibvunzo.Ndapota inzwa wakasununguka kutibata nesu.